Decay times of photoluminescence from KBr:Sn²⁺

V. S. Sivasankar Department of Chemistry, University of Western Ontario, London, Ontario, N6A 5B7, Canada; Centre for Interdisciplinary Studies in Chemical Physics, University of Western Ontario

A. Scacco Department of Chemistry, University of Western Ontario, London, Ontario, N6A 5B7, Canada; Istituto di Fisica, Universita di Roma, Roma, Italy

K. Schmitt Department of Chemistry, University of Western Ontario, London, Ontario, N6A 5B7, Canada; Physikalisches Institut, Westfälischen Wilhelms Universität, Munster, West Germany

P. W. M. Jacobs Department of Chemistry, University of Western Ontario, London, Ontario, N6A 5B7, Canada; Centre for Interdisciplinary Studies in Chemical Physics, University of Western Ontario

D. J. Simkin Department of Chemistry, McGill University, Montreal, Quebec, H3C2G1, Canada

Abstract

The radiative decay time of the 500 nm emission from KBr:Sn²⁺ excited in the A-band (303 nm) has been measured at several temperatures in the range 1.5–300 K. Only a single decay time with a strong temperature dependence has been observed. A kinetic model previously developed for similar systems has been used to analyse the data. This model accounts very well for the observed temperature dependence of the radiative decay time of KBr:Sn²⁺ also. The absence of a fast decay component has led to the conclusion that the relaxation following absorption results in populating only the lower metastable level.

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Decay times of photoluminescence from KBr:Sn²⁺

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Decay times of photoluminescence from KBr:Sn²⁺