Disorder production in Si⁺ implanted InP

M. Slater Thin Film and Surface Research Centre, Department of Electronic and Electrical Engineering, University of Salford, Salford, M5 4 WT, UK

M. J. Nobes Thin Film and Surface Research Centre, Department of Electronic and Electrical Engineering, University of Salford, Salford, M5 4 WT, UK

G. Carter Thin Film and Surface Research Centre, Department of Electronic and Electrical Engineering, University of Salford, Salford, M5 4 WT, UK

Abstract

The disorder generated by 40-keV Si⁺ implantation of (100) InP has been studied as a function of ion fiuence and flux density using the Rutherford backscattering-channelling technique. The effects of disorder production by the 2-MeV He⁺ analysing beam on the implanted samples were minimal. The resulting disorder was, however, highly dependent upon flux density. Considerable annealing, which reduced the total disorder was found to take place during implantation, storage and during analysis.

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Disorder production in Si+ implanted InP

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Disorder production in Si⁺ implanted InP