Silicon amorphization during heavy ion implantation-part II

Abstract

The silicon amorphization process during heavy ion implantation is considered. Expressions are derived for the critical doses, ϕ₀ and ϕ_cr for silicon amorphization at low and room implantation temperatures. respectively. Silicon amorphization doses are calculated for Kr⁺, Xe⁺, Nd⁺, Yb⁺, and Hg⁺ ions. ϕ₀ is shown to decrease by a factor of 1.5 to 2 in the energy range 10 to 100 keV, and with further increase in energy ϕ₀ is shown to remain constant. At low energiesE ≲ 40 keV critical doses for silicon amorphization depend weakly on ion mass and implantation temperature (in the range 100 to 300 K). The value of ϕ_cr/ϕ₀ increases with energy and decreases with increasing implanted ion mass. The results of calculations agree well with experimental data.