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Abstract
We have theoretically investigated the effect of pressure on the structural stability of GaP : InP mixed system. The three-body-potential (TBP) model has been used. The TBP model consists of long-range as well as short-range interactions; the long-range part includes the modified Coulomb force as well as a three-body term; the short-range part in TBP defines the van der Waals and overlap repulsive interactions. We observe a pressure-induced structural phase transformation from ZnS (B3) to NaCl (B1) type phase in Ga 1−x In x P. Our calculated transition pressures for the initial GaP and final InP compound semiconductors are in good agreement with other reported data.
Acknowledgements
We are thankful to Prof. M. Kumagawa, Prof. Y. Hayakawa and Dr. Balakrishnan, Research Institute of Electronics, Shizuoka University, Japan, for valuable discussions. Professor Srivastava is also thankful to Satellite Venture Business Laboratory, Japan, for providing the financial support to work as a visiting scientist.
Notes
Communicated to Commemorate the 60th birthday of author, Prof. R.K. Singh.