Abstract
It is shown that the Mott criterion expressed by the simple relation a B(n c)1/3 ≈ 0.25 turns out to be quite successful in describing metal–insulator phase transitions not only in heavily doped semiconductors, but also in transition metal oxides such as VO2 and V2O3. It is found in this article that, in the case of a high-temperature transition ‘paramagnetic insulator – paramagnetic metal’ in vanadium sesquioxide, a B(n c)1/3 = 0.254. Difficulties connected with the analogous description of a low-temperature transition (‘paramagnetic metal – antiferromagnetic insulator’) in V2O3 are discussed.
Acknowledgements
This study was supported by the Ministry of Education and Science of Russian Federation, ‘Scientific and Educational Community of Innovation Russia (2009-2113)’ Program through contracts no. 02.740.11.0395, 02.740.11.5179, 14.740.11.0137 and project no. 8051, as well as ‘Development of Scientific Potential of High School (2009-2011)’ Program, project no. 12871. The authors also thank V. P. Novikova for her help in the article preparation.