Abstract
In this article we provide an overview of phenomena involving domain walls in BiFeO3 as nanoscale functional elements. Because ferroelectric domain walls can be routinely modified using electric fields, our results suggest a new degree of flexibility for domain boundary engineering and oxide-based nanoelectronics.
Acknowledgements
This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences Division of the US Department of Energy under contract No DE-AC02-05CH1123. J.S. acknowledges support from the Alexander von Humboldt Foundation.