BiFeO₃ single crystal as resistive switching element for application in microelectronic devices

Abstract

Local resistive switching was observed using AFM equipped with conducting tip addressing ∼15 unit cells in high-quality BiFeO₃ single crystal grown from a non-stoichiometric melt. The switching appeared under high-vacuum conditions above 340 K and the studies at various temperatures yield the activation energy of 0.74 eV. The field-induced changes in the resistivity were ascribed to the presence of localized oxygen vacancies as a consequence of the mixed valence of Fe²⁺/Fe³⁺ ions.

Keywords:

• BiFeO₃ single crystal
• resistive switching
• multiferroics
• AFM study
• terabit memory devices