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Abstract
A temperature induced metal-insulator transition has been found in TiSxSe2-x single crystals. The M-I transition is found to occur over the temperature range 250° to 300°C for 1.0 ≤ x ≤ 1.7. The present observation of the M-I transition has been compared and contrasted with the earlier reported M-I transition in TiS1.7 single crystals. Evidence is presented and arguments are put forward in support of the occurrence of the M-I transition in terms of the variation in disorder of the extra Ti atoms in the van der Waals gap. The possible reason for the suppression of the M-I transition in TiSxSe2-x for x ≤ 1 is outlined.