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Original Articles

Internal-friction study of the interstitial–substitutional effect on the deformation behaviour of Nb–O, Nb–Ta–O and Nb–Mo–O single crystals

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Pages 2343-2357 | Received 11 Dec 2000, Published online: 01 Feb 2008
 

Abstract

To investigate the interstitial-substitutional interaction in dislocations, the effect of 0 on the temperature, frequency and amplitude dependence of the internal friction Q −1 in Nb–O, Nb-20 mol% Ta–O and Nb-20 mol% Mo–O single crystals has been studied (f = 1.55–8.2 Hz) in the temperature range from 298 to 1473 K. In our previous study, Nb–Mo and Nb–Ta single crystals were found to be strengthened by solute O. It was also suggested that the interstitial–substitutional interaction in dislocations contributes to the increase in their critical resolved shear stress (CRSS). In this study, Snoek-type relaxation peaks due to O are observed between 500 and 700 K in all the single crystals. The Snoek peak of Nb-20mol% Mo–O consisting of several peaks is analysed. The activation energy of the Snoek peak in Nb-20mol% Mo–O is higher than that of Nb–O. These results are attributable to the existence of the interstitial–substitutional complexes. The amplitude dependence of Q −1 at intermediate and high temperatures decreases as the O content increases. Moreover, the breakaway stress of Nb-20 mol% Mo–O still has a high value at 1200K and does not decrease much even at 1473 K. This suggests that the formation of Mo–O complexes reduces the dislocation mobility at high temperatures. From the results, the effect of the interstitial-substitutional interaction on the CRSS was discussed.

Additional information

Notes on contributors

Eri Miura

Present address: Department of Development and Reconstructive Medicine, Course of Medical and Dental Sciences, Graduate School of Biomedical Sciences, Nagasaki University School of Dentistry, 1-7-1 Sakamoto, Nagasaki 852-8588, Japan

Ken'ichi Ota

Present address: Division of Ceramic Physics, Department of Chemistry and Materials Technology, Kyoto Institute of Technology, Goshokaido-cho, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan

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