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Abstract
Diffusion of indium in GaSb is investigated in both Ga-saturated and Sb-saturated crystals for temperatures ranging from 520°C to the melting point (712°C). It is found that the composition of the crystal does have an influence on the diffusion coefficient: indium diffuses faster in Sb-rich than in Ga-rich crystals. The temperature dependence of the diffusion coefficient resembles that of the antimony partial pressure over the compound. This leads us to conclude that indium diffuses by a vacancy mechanism on the gallium sublattice. The results are analysed in terms of a defect-structure model for GaSb.
