Mobilities of quenched-in defects in NiAl

Tian-Min Wang Department of Materials Science, Faculty of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113, Japan; Department of Physics, The University of Lanzhou, Lanzhou, PR. China

Michio Shimotomai Department of Materials Science, Faculty of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113, Japan

Masao Doyama Department of Materials Science, Faculty of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113, Japan

Abstract

Samples of the intermetallic compound NiAl have been quenched from 800–1400°C and their recovery behaviour studied by positron annihilation techniques. Two distinct recovery stages were found by Doppler broadening measurements; one at around 280°C and the other at around 500°C. It is shown that vacancies anneal out at the latter stage. The former stage is ascribed to the migration of divacancies to form voids.

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Mobilities of quenched-in defects in NiAl

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Mobilities of quenched-in defects in NiAl

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