Observations of plane-matching grain boundaries by electron channelling patterns

Abstract

Observations of {110} plane-matching grain boundaries have been made by electron channelling patterns (ECPs) for the recrystallization structure of an Fe-3% Si alloy. It has been found that the {110} plane-matching grain boundary plays an important role in the grain growth during recrystallization of the alloy. The grains whose surfaces were near {100} preferentially grew by the migration of a {110} plane-matching grain boundary at the expense of the matrix grain whose surface was near {111} in the direction parallel to {110} plane. The anisotropy of the migration of the {110} plane-matching grain boundaries has been found. A step mechanism is suggested to explain the observed anisotropy of grain boundary migration.