Two independent mechanisms of dynamical recovery in the high-temperature deformation of silicon and germanium

Abstract

As has been reported earlier, the stress-strain curves of monocrystalline silicon and germanium are characterized by two different stages of dynamical recovery at high temperatures, which have been associated with self-diffusion and cross-slip, respectively. In the present paper it is shown that both recovery processes can also be observed in steady-state creep and hot-working experiments on silicon. It is also considered why only one recovery process has been found in creep experiments on germanium. The implications of these findings on the basis of two independently operating recovery processes are discussed. Finally some consequences for f.c.c. metals are indicated.