Recovery of edge-defined film-fed grown silicon Dislocation/twin boundary interaction and mechanisms for twin-induced grain boundary formation

Abstract

Transmission electron microscopy and the electron-beam induced-current technique have been used to study changes in the defect structure of rapidly grown, edge-defined film-fed growth silicon ribbons, processed at high temperatures. Twin boundaries are the major structural defects in the ribbons, and these were found to act as strong obstacles to dislocation glide. This barrier eifect, possible mechanisms for slip transfer, and consequences for the mechanical and electrical properties of the silicon ribbons are discussed. Models are proposed to explain both twin-induced grain boundary formation during recovery of the microstructure and the generation of microtwins and second-order twin joins by glide-induced twinning processes.