On deformation twins in silicon single crystals

Abstract

Deformation twins were introduced in {100} floating-zone silicon single crystals by four-point bending. The stress axis 〈010〉 was so chosen that the deformation twinning was operative under compression. As the nucleation sites for the twins, the indentation marks were made at room temperature on the compression side of the specimen. The deformation twins were generated and grown under a constant high stress at 450°C. The formation of deformation twins was confirmed by transmission electron microscopy, and the operating twin systems were analysed utilizing synchrotron radiation topography.