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Philosophical Magazine A Volume 53, 1986 - Issue 3
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Original Articles

Comparison of calculated depth distributions of implanted ions for genuine and Ge-substituted InP targets

D. S. Karpuzov Department of Electronic and Electrical Engineering, University of Salford, Salford, M5 4WT, U.K.; Institute of Electronics, Bulgarian Academy of Sciences, Sofia, 1784, Bulgaria
,
J. J. Jimenez-rodriguez Department of Electronic and Electrical Engineering, University of Salford, Salford, M5 4WT, U.K.; Department of Electricity and Electronics, Faculty of Physical Sciences, University of Madrid, Madrid 3, Spain
&
D. G. Armour Department of Electronic and Electrical Engineering, University of Salford, Salford, M5 4WT, U.K.
Pages L49-L54 | Received 14 Nov 1985, Accepted 14 Jan 1986, Published online: 27 Sep 2006
 
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Abstract

Both MARLOWE-based computer simulation and transport theory have been used to evaluate the depth distributions of ion range and damage in InP assuming diatomic or monoatomic (Ge-substituted) targets. Results indicate that the mean depth and straggling in both distributions are higher for the diatomic target but deviations are less than 10–15% for the cases studied: N, Zn and Bi ions in the energy range of 10 to 40 keV.

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