Anomalous twin boundaries in epitaxial zinc selenide grown on (100)oriented GaAs substrates by molecular beam epitaxy

Abstract

Anomalous ‘bent’ microtwins lying in a 〈111〉 direction and containing high concentrations of Ga and As have been observed in ZnSe epitaxial layers grown on (100)-oriented GaAs substrates by molecular beam epitaxy at 410°C. The bend radius R _meas of 0·928 × 10⁻⁵ m compares favourably with a theoretical value based on the use of expressions applicable to a bimetallic strip comprised of GaAs and ZnSe.