![Sample our Engineering & Technology journals, sign in here to start your access, latest two full volumes FREE to you for 14 days]({"type":"image" , "src" : "/sda/5933/TOC-Subject-Sample-2021-Engineering-Tech.jpg"})
Abstract
The growth kinetics at room temperature of Ag on phosphorus-passivated (100) InP have been studied by Auger electron spectroscopy (AES), ultraviolet photoelectron spectroscopy (UPS) and reflection high-energy electron diffraction (RHEED). The passivating layer is made up of two monolayers (ML) of phosphorus. Ag is evaporated step-by-step from 0.7 ML up to 95 ML. Two regions are distinguished. At low coverage (θAg < 2–3 ML), Ag reacts with the P overlayer to form an interfacial phosphide phase. The substrate disruption remains very limited and only a little metallic In is observed to segregate at the surface of the phosphide phase. For higher coverage, Ag rearranges epitaxially. The Ag layer is saturated with P and 1–2 ML of P is segregated on the Ag surface. No metallic In has been dissolved in or alloyed with the growing Ag crystals.
The microstructure of the interfacial region has been observed and characterized by high-resolution transmission electron microscopy (HREM) and optical diffraction on the micrographs. The growth of small AgP2 grains (∼ 30 Å) is observed in epitaxial relationship with Ag grains. Ag itself grows epitaxially on InP and the relationship is in agreement with the one deduced from RHEED experiments.