Dislocation structures in In-doped and undoped GaAs deformed at 700-1100°C

Abstract

Dislocation structures in In-doped and undoped GaAs single crystals deformed at 700-1100°C have been studied by transmission electron microscopy. The results for (Ga, In)As, similar to earlier findings for Si and Ge, provide the basis for a proposed model for recovery processes. The observed structures together with their mechanical properties indicate that the role of In is consistent with an athermal contribution to the frictional stress arising from a solid-solution-hardening effect.