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The temperature and pressure dependence of diffusion of Sn113 implanted in high-purity aluminium single crystals has been investigated by means of the serial-sectioning technique. It was found that tin is a fast diffusing solute in A1. The temperature dependence of the process in the temperature range 649–906 K can be described by
The activation volume of diffusion was found to be 0·87 ± 0·01 in atomic volume units at 787·5 K.
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