Delocalization corrections using a disordered structure for atom location by channelling-enhanced microanalysis in the Ni-Al system

Z. Horita Department of Materials Science and Engineering, Faculty of Engineering 36, Kyushu University, Hakozaki, Fukuoka, 812, Japan

H. Kuninaka Department of Materials Science and Engineering, Faculty of Engineering 36, Kyushu University, Hakozaki, Fukuoka, 812, Japan

T. Sano Department of Materials Science and Engineering, Faculty of Engineering 36, Kyushu University, Hakozaki, Fukuoka, 812, Japan

M. Nemoto Department of Materials Science and Engineering, Faculty of Engineering 36, Kyushu University, Hakozaki, Fukuoka, 812, Japan

J. C. H. Spence Department of Physics, Arizona State University, Tempe, Arizona, 85287–1504, USA

Abstract

A correction procedure for the delocalization effect when determining the site occupancy of an impurity element by atom location by channelling-enhanced microanalysis is proposed. The procedure utilizes a disordered structure with a composition similar to the ordered structure. Correction factors are derived by illuminating a sample with a disordered structure in the same orientation as for the ordered structure. The correction procedure is applied to a determination of the Ti occupancy in a Ni₃Al intermetallic compound.

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Delocalization corrections using a disordered structure for atom location by channelling-enhanced microanalysis in the Ni-Al system

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Delocalization corrections using a disordered structure for atom location by channelling-enhanced microanalysis in the Ni-Al system

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