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Original Articles

The interaction of oxygen with dislocation cores in silicon

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Pages 905-915 | Received 13 Aug 1992, Accepted 24 Sep 1992, Published online: 13 Sep 2006
 

Abstract

The interaction of O with 90° partial dislocations in Si is examined using a cluster method with local-density-functional pseudo-potential theory. We consider several states of O at dislocation cores firstly which are normally reconstructed and secondly which contain solitonic reconstructed bonding patterns. This topic has been the subject of a number of experiments by Sumino and his collaborators, and our overall findings support his conclusions.

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