The quantitative determination of the degree of ordering of Ga_0·51In_0·49P using transmission electron microscopy

Abstract

A method is described which enables the degree of ordering of Ga^xIn_1−xP to be quantitatively determined from measurements of the diffraction intensities by transmission electron microscopy. The morphology of the ordering within the layers has a profound effect on both the approach which must be adopted and the interpretation of the measurements. Using this method we have measured values of the order parameter S which range from 0·16 to 0·85 for layers of Ga_0·51In_0·49P grown under different conditions.