On the mobility of dislocations in semiconductors

Abstract

The velocities of fast and slow 60° dislocations in InSb have been measured under tensile and compressive stresses at bending in two glide planes symmetrically located with respect to the bending axis. It has been shown that the difference of more than one order of magnitude between the velocities of 60° dislocations is not related to the sign of the dislocation. The velocities of screw and 60° dislocations have been measured under deformations having various ratios of shear and normal components of the applied stresses. The velocity of a dislocation has been found to be higher in the case when the normal component is smaller. The results obtained suggest the Occurrence of jogs of particular sign on a dislocation.