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Abstract
The homoepitaxial growth of InP on a prepared InP(001) substrate, having initially a surface covered by 〈110〉-oriented ridges, can produce planar defects originating from the ridge region. A high-resolution electron microscopy (HREM) investigation of these defects has been undertaken, showing that a high density of stacking faults and ultra-thin [Sgrave] = 3 twins are present. A detailed characterization of the (111) extended twin facets is performed using simulations of the HREM images. Two consecutive twin tips can be linked an intrinsic fault bridge limited two 1/6〈110〉 dislocations. Other tips have a 1/6〈112〉 total Burgers vector content.