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A large-angle convergent-beam electron diffraction pattern with fine diffraction lines from a cross-sectional specimen of Gexsi1−x/Si strained-layer superlattices can give much information on local strain and misfit stress relaxation. The diffraction lines in the GeSi layers are shifted from those in the Si layers by the misfit strain and the strain relaxation. In this paper we shall demonstrate that the effects of elastic relaxation and the residual strains can be separated.
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