A model for dislocation glide with impurity dragging: Application to GaAs:0·2at. % In

Abstract

To account for the occurrence of a dragging regime established previously in the case of GaAs: 0·2 at.% In, we propose a model based on the existence of two populations of kinks along the dislocation line: free kinks and kinks coupled with In atoms. With a simple hypothesis concerning the variation in obstacle incorporation with the distance travelled by the dislocation, the model gives a good description of experimental results and allows a high value of the additional barrier height for In dragging to be derived: β= 0·6eV. The evolution of the incorporation coefficient with temperature and stress is discussed.