Abstract
The diffusion of implanted Sn in α-Ti has been studied in the 873–1073 K temperature range using the Rutherford back-scattering spectrometry technique. For this purpose we have implanted Sn in α-Ti samples with two different impurity contents. The measurements in those with a lower level of impurities show that the diffusion coefficients follow a linear Arrhenius plot with the following parameters:
The measurements in the samples with higher Fe content indicate that the diffusion mechanism is sensitive to the impurity concentration.