Interfacial dislocations at the junction lines of {211} microfacets of a twin boundary in silicon

Abstract

A faceted {211}-{211}, σ = 3 twin boundary in polycrystalline silicon has been observed for the first time by transmission electron microscopy. The facets are crystallographically equivalent regions of interface and the boundary exhibits dislocations along the facet junction lines. The defects were characterized a priori using the topological theory of line defects in interfaces. This analysis predicts the relevant geometrically necessary defects. The dislocations were imaged in dark field conditions using common reflections which were weak in intensity. Image simulation was employed for the purpose of comparison with the theoretical predictions, and good agreement was achieved.