Localized charge carrier transport in pure single crystals of NiO

Abstract

Results of Seebeck and resistivity measurements on carefully grown pure single crystals of NiO are shown to be inconsistent with predictions based on itinerant carrier models. A new model for hopping conduction, which contains a dependence of the hopping activation energy on spin ordering, is proposed and used to predict accurately the observed magnitude and temperature dependence of the resistivity in NiO.