Abstract
Hall effect measurements have been made on vitreous As2Se2.5S0.5, As2SSeTe, and As2SexTe3-x with x = 2.94 and 2.62. Using results from some previous papers (Roilos 1971, Roilos and Mytilineou 1974), it is possible to make a rather detailed survey of the compositional dependence of the Hall mobility in the amorphous system As2(S, Se, Te)3. The Hall mobility decreases by a factor of about two as the As2Te3 content in the As2SexTe3-x glasses is increased from zero up to 40%; it then increases to its initial value at about 75 % As2Te3 and remains roughly constant up to the compound As2Te3. The Hall mobility activation energy shows a similar behaviour, in contrast to the conductivity activation energy which decreases monotonically with increasing As2Te3 content.
The results are discussed in terms of various models for the Hall effect in amorphous semiconductors.