A model for the determination of the defect concentrations in III–V compounds

Abstract

The defect concentrations in a hypothetical III–V compound containing both types of vacancies and of anti-site defects are calculated directly by minimizing the free enthalpy of the crystal. The general expressions thus obtained are applied to the case of GaSb. The predictions of the model are fitted to Hall effect measurements found in the literature. This yields an estimate of the defect formation energies and of the solidus curve of GaSb.