Electronic states at line defects in silicon

M. J. Kirton Department of Theoretical Physics, School of Physics The University, Newcastle upon Tyne, NEl 7RU, England

S. Brand Department of Theoretical Physics, School of Physics The University, Newcastle upon Tyne, NEl 7RU, England

M. Jaros Department of Theoretical Physics, School of Physics The University, Newcastle upon Tyne, NEl 7RU, England

Abstract

Using a previously described Green function method, we have performed calculations of the electronic states at a line of vacancies in crystalline silicon. The results presented are discussed in terms of our current understanding of the isolated vacancy and the 60° dislocation.

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Electronic states at line defects in silicon

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Electronic states at line defects in silicon

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