Clusters in electron glasses Applications to Si: P

Abstract

Two different Hamiltonians of a topologically disordered system of impurities are studied. The energy levels from a Heisenberg Hamiltonian are compared with the levels from a configuration-interaction calculation. The effects of three- and four-centre integrals are discussed. The two Hamiltonians are applied to Si: P in the non-metallic region. No major differences are found in the calculated specific heat and spin susceptibility for dopant concentrations below 10¹⁸ cm⁻³.