Abstract
Forward-bias steady-state currents in p-i-n a-Si:H structures produce significant electroluminescence (EL). We have measured the EL as a function of temperature under constant-current conditions. We find that the EL exhibits the same temperature dependence as photoluminescence (PL), namely exp(∼T/T*0). For EL, however, T*0 is proportional to the cube root of the current. A simple model based on the experimental results is presented.