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Abstract
A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy, has been fabricated and demonstrated in a p+ -Al0·3Ga0·7 As-doped GaAs n+−n−−i−δ(p+)-i-n−−p+ structure. The S-shaped NDR characteristic is mainly attributed to the δ(p+) barrier blocking in off-state and barrier lowering in on-state due to the injected holes resulted from forward p+−n− junction to the potential barrier maximum. The theoretical analyses and results based on a triangular barrier switch model are employed to study the influence of different barrier heights on current-voltage (I-V) characteristics. Experimental NDR behaviours in two kinds of internal barrier structures for two-terminal operation are reported and discussed. From the experimental results, it is clear that temperature plays an important role on the device properties. A dramatically pronounced NDR with a large on/off voltage ratio of 3.57 is obtained at room temperature.