Abstract
Differential scanning calorimetric studies have been carried out on GeXSe80-x Pb20(17≤×≤24) bulk glasses, which exhibit a change from p- to n-type conduction at x=21at.%. All the samples show a single-stage crystallization followed by a single-stage glass transition. The dependence of glass transition temperature (T g) on composition shows a maximum at x=21at.%. Structural relaxation around the glass transition has been studied by measuring Tg as a function of heating rate (β). Values of activation enthalpies (E g) of the glass transition for different samples reveal that chemical bond breaking in the process of structural relaxation at T g cannot be ignored. Crystallization kinetics have been analysed using the Kissinger method. The crystallization activation energy (E c) and the frequency factor (C o), calculated using the above method for different compositions, show anomalies at x=21 at.%. All the samples show the existence of two distinct melting points. The observed compositional dependence of T g , E c and C o is discussed using the chemically ordered network model.