Defect creation in hydrogenated amorphous silicon films induced by vacuum ultraviolet light from synchrotron and undulator radiation

Abstract

Vacuum ultraviolet light from synchrotron and undulator radiation sources creates defects in hydrogenated amorphous silicon films. The dependence of the defect creation kinetics on photon energy has been investigated. The concentration of the defects induced by photons having an energy above 24 eV is proportional to the irradiation time. The rapid defect creation is due to the breaking of silicon-silicon bonds by the photo-induced plasmons.