Abstract
The valence band structure of zincblende semiconductors is known to cause a fine-structure of Coulomb states due to hole spin-orbit coupling. This fine-structure is modified by uniaxial strain e.g. in hetero-epitaxial layers or under external stress. We extend the theoretical concepts developed by Baldereschi and Lipari by including the strain effects and calculate the binding energies of shallow acceptors and excitons in ZnTe.