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Philosophical Magazine B Volume 70, 1994 - Issue 3: Manuel Cardona-A Collection of Papers to Celebrate his Sixtieth Birthday
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Original Articles

Effects of uniaxial stress on the optical properties of GaAs and GaAs/Ga1−xAl1−x As single quantum wells grown on Si(001) substrates

H. Qiang Physics Department, Brooklyn College of the City University of New York, Brooklyn, New York, 11210, USA; Graduate School and University Center of the City University of New York, New York, New York, 10036, USA
,
Fred H. Pollak Physics Department, Brooklyn College of the City University of New York, Brooklyn, New York, 11210, USA; Graduate School and University Center of the City University of New York, New York, New York, 10036, USA
,
Kai Shumt Institute for Ultrafast Spectroscopy and Lasers, Electrical Engineering and Physics Departments, City College of the City University of New York, New York, New York, 10031, USA; Graduate School and University Center of the City University of New York, New York, New York, 10036, USA
,
Y. Takiguchi Institute for Ultrafast Spectroscopy and Lasers, Electrical Engineering and Physics Departments, City College of the City University of New York, New York, New York, 10031, USA; Graduate School and University Center of the City University of New York, New York, New York, 10036, USA; Hamamatsu Photonics K.K., Central Research Laboratory, Shizuoka, 434, Japan
,
R. R Alfano Institute for Ultrafast Spectroscopy and Lasers, Electrical Engineering and Physics Departments, City College of the City University of New York, New York, New York, 10031, USA; Graduate School and University Center of the City University of New York, New York, New York, 10036, USA
,
S. F. Fang Coordinated Science Laboratory and Materials Research Laboratory, 1045 S. Goodwin Avenue University Of Illinois At Urbana-Champaign, Urbana, Illinois, 61801, USA; Texas Instruments, Dallas, Texas, 75262, USA
&
H. Morkoč Coordinated Science Laboratory and Materials Research Laboratory, 1045 S. Goodwin Avenue University Of Illinois At Urbana-Champaign, Urbana, Illinois, 61801, USA
 show all
Pages 381-395 | Published online: 27 Sep 2006
 

Abstract

The effects of a large external uniaxial stress ([sgrave]) along [100] on the optical features associated with biaxially strained bulk GaAs and two GaAs/Ga1−xAl x As single quantum wells (SQWs), with widths of 52 and 200 Å, grown on Si(001) have been studied using photoreflectance at 77 and 300 K. Measurements were made with incident light polarized parallel and perpendicular to [sgrave]. This stress configuration makes it possible to externally alter the light-hole (LH) and heavy-hole (HH) splitting in both the bulk material and the SQWs. In the SQW of width 200 Å, the ground-state valence band was continually tuned from HLs to HHs. In the bulk material, a stress-induced anticrossing of the LH and HH features of the fundamental gap was observed with an interesting polarization effect.

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