Electronic structure of amorphous semiconducting alloys

Abstract

We present results of ab initio calculations of the geometrical and electronic structure of various amorphous silicon-based semiconducting alloys. The electronic structures of the compounds a-SiO _x , a-SiN_x, a-SiN _x H_y and a-SiO _x N_y are calculated and discussed in detail. The photoemission response as well as the optical absorption spectra are calculated and compared with the available experimental data.