Abstract
In the present work the hydrogen-bonding configuration of hydrogenated amorphous silicon obtained by homogeneous chemical vapour deposition is studied as a function of the substrate temperature. The hydrogen concentration and its bonding configuration have been established using infrared spectroscopy measurements. A decrease in the hydrogen concentration with increasing substrate temperature is observed, and this change is due to a decrease in the amount of hydrogen in the dihydride and polyhydride bonding configurations. The film structure has been examined by Raman spectroscopy and the position and the line width of the transverse-optical like phonon band have been used as characteristic parameters for network perfection. A correlation between network perfection and hydrogen-bonding configuration is observed. The most favourable substrate temperature with regard to the film perfection is estimated to be about 300°C.