Abstract
Computer simulation of tunnelling into materials with a Coulomb gap is presented. The model system is a three-dimensional Coulomb glass lying to one side of an infinite plane. An equipotential near the plane simulates the electrode, which screens the Coulomb interaction between localized electrons in the Coulomb glass. The depth-dependent one-particle density of states is computed, and the results are then used to obtain the tunnelling conductance of the system as a function of voltage.