Crystallization of amorphous Sb‐Sn‐O thin films

Masahiko Kojima Nagoya Municipal Industrial Research Institute, 3–4–41, Rokuban, Atsuta‐ku, Nagoya, Japan

Hisao Kato Nagoya Municipal Industrial Research Institute, 3–4–41, Rokuban, Atsuta‐ku, Nagoya, Japan

Mitsuru Gatto Nagoya Municipal Industrial Research Institute, 3–4–41, Rokuban, Atsuta‐ku, Nagoya, Japan

Abstract

The crystallization of amorphous Sb‐Sn‐O thin films by heat treatment has been investigated. It is found that heat treatment at temperatures higher than 400°C causes the transparent amorphous films to darken and their resistivity to drop by several orders of magnitude. Irradiation of the films with a carbon dioxide laser beam gives rise to local crystallization and selective area darkening.

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Crystallization of amorphous Sb‐Sn‐O thin films

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Crystallization of amorphous Sb‐Sn‐O thin films

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