The mobility of γ-ray induced defects in reverse biased germanium n⁺p diodes

Abstract

The motion of γ-induced defect centres in reverse biased germanium n⁺p diodes has been observed using deep level transient spectroscopy. The concentration profile of the E_v + 0.38 eV centre is presented as a function of the duration of the electric field application. A mobility of 6.4 ± 3.4 × 10¹⁴ cm²/v.sec at 25°C was obtained for this level, whilst a value of 2.2 ± 1.3 × 10⁻¹⁴ cm²/v.sec at 25°C was obtained for the E_v + 0.18 eV centre.