Effect of crystallographic orientation on the dislocation structure development in ion implanted Si

F. F. Komarov Institute of Applied Physics Problems, Be***Iorussian University, Minsk

V. D. Kuryazov Institute of Applied Physics Problems, Be***Iorussian University, Minsk

V. S. Solov'ev Institute of Applied Physics Problems, Be***Iorussian University, Minsk

S. Yu. Shiryaev Institute of Applied Physics Problems, Be***Iorussian University, Minsk

Abstract

Transmission electron microscopy (TEM) has been employed to study the damage structure of P⁺-implanted (001) and (111) Si annealed in inert and oxidizing atmospheres. Both the dislocation structure composition and the density of misfit dislocations have been found to be strongly dependent upon the crystal orientation. Role of the crystal orientation in the dislocation structure development has been discussed.

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Effect of crystallographic orientation on the dislocation structure development in ion implanted Si

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Effect of crystallographic orientation on the dislocation structure development in ion implanted Si

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