Progress of Aluminum Gallium Indium Phosphide Red Laser Diodes and Beyond

Abstract

High-quality aluminum gallium indium phosphide epitaxial layers for red laser diodes have been grown by the metal organic chemical vapor deposition method. The layers have some issues, such as narrowing of the band gap, low p-carrier concentration, difficulty in epitaxial growth for quantum well structures, and generating of high-density hillocks. The issues have been successfully solved by introducing (100) substrates with misorientaion toward the [011] direction. High performance transverse-mode stabilized lasers are achieved by introducing the substrates, novel strain-compensated multiple-quantum well structures, which can add large strain to the wells, and low-loss optical cavity. This article also describes their applications.

Keywords:

• aluminum gallium indium phosphide
• laser diode
• metal organic chemical vapor deposition
• misorientation substrate
• multiple quantum well
• p-carrier concentration
• post-heat treatment
• strain-compensated multiple quantum well
• strained multiple quantum well

Acknowledgment

The author would like to express gratitude for all the colleagues who joined in developing red LDs in SANYO Electric Co., Ltd.

Additional information

Notes on contributors

Hiroki Hamada

Hiroki Hamada was born in Kagawa, Japan in 1953. In 1980, he joined Sanyo Electric Co., Ltd., Osaka, Japan, Then, he joined Faculty of Science and Engineering, KINKI University in 2013. He is the author of over 100 papers and conference papers, an author of two books chapters on LTPS TFT LCDs, and has issued patents over 170. He received the best paper award in 2003 from IEICE, and awarded the citation of IEEE Fellow in 2008, and SID special recognition awards in 2010. He has been served as the organizing chair of International workshop on AMFPD since 2004, the program committee of IDW, co-organizers of ECS annual meeting, and the guest editors of JJAP special issues and regular editor of IEICE. He is IEEE Fellow and SID, IEICE senior member. He is a member of the JSAP, ECS, and the Laser Society of Japan. He has also served as representative director of International Society of Functional Thin Film Materials and Devices (FTFMD).