The use of III-V compounds for integrated optical circuits

Abstract

Recent progress in the development of integrated optical circuits using the III-V compound semiconductors is reviewed. The application of double heterostructure configurations is emphasized, not only for optical sources, but also for detectors, with reference to both the A/GaAs/GaAs system and the InGaAsP quaternary. Devices utilizing periodic corrugations are described briefly, whereas alternate attempts to fabricate optical circuits by etching or sputtering techniques are discussed in more detail. Recent advances in processing techniques suitable for optical integration, such as reactive-ion etching, and the use of lasers or electron beams for device processing, are described.