Monolithic III-V light-emitting devices on Si substrates

Abstract

The recent progress on the light-emitting devices on Si substrate is reviewed. It is shown, in GaAs on Si, that the reduction of the thermal stress is essential to improve laser lifetime and also to decrease dislocation density. Several methods of reducing the thermal stress, such as the low temperature growth, three layer structure, and the post-growth patterning, are explained. In contrast to the GaAs system, the devices made of indium-related compounds such as InGaAs and InGaAsP are less sensitive to the dislocation and, hence, have superior laser lifetime compared to GaAs devices. The material aspects regarding the light emitters on Si are discussed.