Effect of acetic acid on the leaching behavior of impurities in metallurgical grade silicon

Haifei LuThe National Engineering Laboratory for Vacuum Metallurgy, State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, P. R. China;Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming University of Science and Technology, Kunming, P. R. ChinaView further author information

Kuixian WeiThe National Engineering Laboratory for Vacuum Metallurgy, State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, P. R. China;Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming University of Science and Technology, Kunming, P. R. ChinaCorrespondence[email protected]; [email protected]
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Wenhui MaThe National Engineering Laboratory for Vacuum Metallurgy, State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, P. R. China;Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming University of Science and Technology, Kunming, P. R. ChinaCorrespondence[email protected]; [email protected]
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Keqiang XieKey Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming University of Science and Technology, Kunming, P. R. ChinaView further author information

Jijun WuThe National Engineering Laboratory for Vacuum Metallurgy, State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, P. R. China;Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming University of Science and Technology, Kunming, P. R. ChinaView further author information

Yun LeiThe National Engineering Laboratory for Vacuum Metallurgy, State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, P. R. China;Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming University of Science and Technology, Kunming, P. R. ChinaView further author information

Yongnian DaiThe National Engineering Laboratory for Vacuum Metallurgy, State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, P. R. ChinaView further author information

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ABSTRACT

To explore the potential of acid leaching in purification metallurgical grade silicon (MG-Si) for solar cells, the effect of acetic acid on the leaching behavior was investigated in the present work by focusing on the behavior of impurities affected by the addition of acetic acid to a conventional acid mixture composed of hydrochloric acid and hydrofluoric acid. The etching results reveal that the HCl–HF–CH₃COOH mixture is a better lixiviant for dissolving impurity inclusions in MG-Si. The extraction yield of impurities in HCl–HF–CH₃COOH leaching was found to increase by 7% compared to conventional HCl–HF leaching.

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Funding

This study was supported by the National Natural Science Foundation of China (No. 51461027, 51334002) and Open fund of State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization (No. CNMRCUTS1406).

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Effect of acetic acid on the leaching behavior of impurities in metallurgical grade silicon

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